N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB105N60EF-GE3
- RS Stock No.:
- 204-7204
- Mfr. Part No.:
- SIHB105N60EF-GE3
- Brand:
- Vishay
Available for back order.
Price (ex. GST) Each (On a Reel of 3000)
$3.291
(exc. GST)
$3.62
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $3.291 | $9,873.00 |
| 6000 - 9000 | $3.209 | $9,627.00 |
| 12000 + | $3.159 | $9,477.00 |
*price indicative
- RS Stock No.:
- 204-7204
- Mfr. Part No.:
- SIHB105N60EF-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
Low effective capacitance (Co(er)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 29 A |
| Maximum Drain Source Voltage | 600 V |
| Series | SiHB105N60EF |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.102 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Number of Elements per Chip | 1 |
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