Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263

Bulk discount available

Subtotal (1 tube of 50 units)*

$326.85

(exc. GST)

$359.55

(inc. GST)

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  • 650 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 50$6.537$326.85
100 - 150$6.373$318.65
200 +$6.275$313.75

*price indicative

RS Stock No.:
145-1820
Mfr. Part No.:
SIHB30N60E-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.65 mm

Height

4.83mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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