- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Brand:
- Vishay
750 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$3.647
(exc. GST)
$4.012
(inc. GST)
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | $3.647 | $182.35 |
100 - 150 | $3.556 | $177.80 |
200 + | $3.501 | $175.05 |
*price indicative
- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 15 A drain current.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 15 A |
Maximum Drain Source Voltage | 800 V |
Package Type | D2PAK (TO-263) |
Series | E |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.25 Ω |
Maximum Gate Threshold Voltage | 2 → 4V |
Number of Elements per Chip | 1 |
Related links
- N-Channel MOSFET, 15 A, 800 V, 3-Pin D2PAK Vishay SIHB17N80AE-GE3
- N-Channel MOSFET, 15 A, 800 V, 3-Pin D2PAK Vishay SIHB17N80E-GE3
- N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK Vishay SIHB5N80AE-GE3
- N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK Vishay SIHB21N80AE-GE3
- N-Channel MOSFET, 13 A, 800 V, 3-Pin D2PAK Vishay SIHB15N80AE-GE3
- N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3
- Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK Vishay SIHB24N80AE-GE3
- N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB105N60EF-GE3