Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

$141.60

(exc. GST)

$155.75

(inc. GST)

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Last RS stock
  • Final 1,950 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 - 50$2.832$141.60
100 - 150$2.762$138.10
200 +$2.719$135.95

*price indicative

RS Stock No.:
210-4966
Mfr. Part No.:
SIHB11N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

78W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

14.61mm

Height

4.06mm

Width

9.65 mm

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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