- RS Stock No.:
- 915-8830
- Mfr. Part No.:
- C3M0065090J
- Brand:
- Wolfspeed
1 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$26.39
(exc. GST)
$29.03
(inc. GST)
Units | Per unit |
1 - 12 | $26.39 |
13 - 24 | $25.77 |
25 + | $25.36 |
- RS Stock No.:
- 915-8830
- Mfr. Part No.:
- C3M0065090J
- Brand:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 900 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 78 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.1V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 113 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | +25 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 30 nC @ 15 V |
Length | 10.23mm |
Maximum Operating Temperature | +150 °C |
Width | 10.99mm |
Transistor Material | SiC |
Forward Diode Voltage | 4.4V |
Minimum Operating Temperature | -55 °C |
Height | 4.57mm |
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