Infineon HEXFET N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

RS Stock No.:: 541-0086
Distrelec Article No.:: 303-41-412
Mfr. Part No.:: IRLZ44NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

Bulk discount available

Subtotal (1 unit)**

$2.24

(exc. GST)

$2.46

(inc. GST)

2 In AU stock for next working day delivery*

140 In Global stock for delivery within 10 working day(s)

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $60.00 ex GST

Real time qty checker

Units	Per unit
1 - 12	$2.24
13 - 24	$2.22
25 +	$2.18

**price indicative

RS Stock No.:: 541-0086
Distrelec Article No.:: 303-41-412
Mfr. Part No.:: IRLZ44NPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF

This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.

Features & Benefits

• Supports continuous drain current up to 47A for effective power delivery
• Operates at a drain-source voltage of 55V, enhancing application versatility
• Maximum power dissipation of 110W optimises thermal management
• Enhancement mode design ensures effective switching and control
• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
• High current handling with a low on-resistance of 22mΩ improves efficiency

Applications

• Power supply circuits requiring efficient load switching
• DC-DC converters in renewable energy systems
• Automotive demanding high performance
• Motor control systems for enhanced operational efficiency
• Lighting systems requiring precise power regulation

What is the operating temperature range of the device?

The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.

How should this be mounted for optimal performance?

It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.

Can it be used with other power management components?

Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.

What are the implications of the gate threshold voltage range?

A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	47 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Length	10.54mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	48 nC @ 5 V
Width	4.69mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Forward Diode Voltage	1.3V
Height	8.77mm
Minimum Operating Temperature	-55 °C