N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

RS Stock No.:: 495-578
Mfr. Part No.:: IRFB4110PBF
Brand:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

12 In AU stock for next working day delivery

237 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$7.93

(exc. GST)

$8.72

(inc. GST)

Units	Per unit
1 - 12	$7.93
13 - 24	$7.78
25 +	$7.65

RS Stock No.:: 495-578
Mfr. Part No.:: IRFB4110PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	10.66mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.82mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.02mm