ROHM SH8M24GZE Dual N/P-Channel MOSFET, 6 A, 45 V, 8-Pin SOP SH8M24GZETB
- RS Stock No.:
- 171-9905
- Mfr. Part No.:
- SH8M24GZETB
- Brand:
- ROHM
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-9905
- Mfr. Part No.:
- SH8M24GZETB
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 45 V | |
| Series | SH8M24GZE | |
| Package Type | SOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 92 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5 (N Channel) V, 2.5 (P Channel) V | |
| Minimum Gate Threshold Voltage | 1 (N Channel) V, 1 (P Channel) V | |
| Maximum Power Dissipation | 3.1 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 4.05mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 13 nC @ 5 V (P Channel), 6.8 nC @ 5 V (N Channel) | |
| Length | 5.2mm | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 45 V | ||
Series SH8M24GZE | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 92 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5 (N Channel) V, 2.5 (P Channel) V | ||
Minimum Gate Threshold Voltage 1 (N Channel) V, 1 (P Channel) V | ||
Maximum Power Dissipation 3.1 W | ||
Maximum Gate Source Voltage ±20 V | ||
Width 4.05mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13 nC @ 5 V (P Channel), 6.8 nC @ 5 V (N Channel) | ||
Length 5.2mm | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- JP
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
4V-drive type
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
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