MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation
RS Stock No. 919-4763
Mfr. Part No.IRF3205PBF
BrandInfineon
$2.599
Each (In a Tube of 50)
units
N 110 A 55 V 8 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement - 200 W
RS Stock No. 486-2206
Mfr. Part No.STP16NF06
$1.546
Each (In a Pack of 5)
units
N 16 A 60 V 100 mΩ 4V 2V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 45 W
RS Stock No. 911-4849
Mfr. Part No.SPW47N60C3FKSA1
BrandInfineon
$14.771
Each (In a Tube of 30)
units
N 47 A 650 V 70 mΩ 3.9V 2.1V -20 V, +20 V TO-247 Through Hole 3 Single Enhancement - 415 W
RS Stock No. 124-9012
Mfr. Part No.IRFP3206PBF
BrandInfineon
$4.423
Each (In a Tube of 25)
units
N 200 A 60 V 3 mΩ 4V 2V -20 V, +20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 280 W
RS Stock No. 462-3455
Mfr. Part No.SPW47N60C3FKSA1
BrandInfineon
$22.18
Each
units
N 47 A 650 V 70 mΩ 3.9V 2.1V -20 V, +20 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 415 W
RS Stock No. 688-6989
Mfr. Part No.IRFP3206PBF
BrandInfineon
$4.52
Each (In a Pack of 2)
units
N 200 A 60 V 3 mΩ 4V 2V -20 V, +20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 280 W
RS Stock No. 165-6701
Mfr. Part No.IPP320N20N3GXKSA1
BrandInfineon
$2.80
Each (In a Tube of 50)
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N 34 A 200 V 32 mΩ 4V 2V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 136 W
RS Stock No. 823-5642
Mfr. Part No.IPP320N20N3GXKSA1
BrandInfineon
$4.37
Each (In a Pack of 2)
units
N 34 A 200 V 32 mΩ 4V 2V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 136 W
RS Stock No. 920-8764
Mfr. Part No.STP16NF06
$0.548
Each (In a Tube of 50)
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N 16 A 60 V 100 mΩ - - -20 V, +20 V TO-220 Through Hole 3 Single Enhancement - 45 W
RS Stock No. 178-7590
Mfr. Part No.FDN338P
$0.142
Each (On a Reel of 3000)
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P 1.6 A 20 V 115 mΩ 1.5V 0.4V -8 V, +8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 500 mW
RS Stock No. 920-6601
Mfr. Part No.STP16NF06L
$0.845
Each (In a Tube of 50)
units
N 16 A 60 V 90 mΩ 2.5V 1V -16 V, +16 V TO-220 Through Hole 3 Single Enhancement - 45 W
RS Stock No. 687-5383
Mfr. Part No.STP16NF06L
$1.628
Each (In a Pack of 10)
units
N 16 A 60 V 90 mΩ 2.5V 1V -16 V, +16 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 45 W
RS Stock No. 822-2649
Mfr. Part No.DMP3160L-7
$0.101
Each (In a Pack of 50)
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P 2 A 30 V 190 mΩ 2.1V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.08 W
RS Stock No. 671-0438
Mfr. Part No.FDN338P
$0.406
Each (In a Pack of 10)
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P 1.6 A 20 V 115 mΩ 1.5V 0.4V -8 V, +8 V SOT-23 Surface Mount 3 Single Enhancement - 500 mW
RS Stock No. 543-0030
Mfr. Part No.IRFP450APBF
BrandVishay
$5.75
Each
units
N 14 A 500 V 400 mΩ - 2V -30 V, +30 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 190 W
RS Stock No. 796-5119
Mfr. Part No.TPC8128
BrandToshiba
$1.536
Each (In a Pack of 5)
units
P 16 A 30 V 6.9 mΩ 2V - -25 V, +20 V SOP Surface Mount 8 Single Enhancement Power MOSFET 1.9 W
RS Stock No. 178-0801
Mfr. Part No.IRFP450APBF
BrandVishay
$3.74
Each (In a Tube of 25)
units
- - - - - - - - - - - - - -
RS Stock No. 166-3335
Mfr. Part No.FDS6675
$1.077
Each (On a Reel of 2500)
units
P 11 A 30 V 23 mΩ - 1V -20 V, +20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W
RS Stock No. 543-1099
Mfr. Part No.IRF1405PBF
BrandInfineon
$5.31
Each
units
N 169 A 55 V 5 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 330 W
RS Stock No. 796-5070
Mfr. Part No.TK100E10N1
BrandToshiba
$3.32
Each
units
N 207 A 100 V 3.4 mΩ 4V - -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 255 W
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