Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

RS Stock No.:: 814-1225
Mfr. Part No.:: SIA517DJ-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

Available for back order.

Price (ex. GST) Each (In a Pack of 20)

$0.829

(exc. GST)

$0.912

(inc. GST)

Units	Per unit	Per Pack*
20 - 740	$0.829	$16.58
760 +	$0.809	$16.18

*price indicative

RS Stock No.:: 814-1225
Mfr. Part No.:: SIA517DJ-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual N/P-Channel MOSFET, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 4.5 A
Maximum Drain Source Voltage	12 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	65 mΩ, 170 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	6.5 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Length	2.15mm
Typical Gate Charge @ Vgs	13.1 nC @ 8 V, 9.7 nC @ 8 V
Transistor Material	Si
Width	2.15mm
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C