Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

RS Stock No.:: 145-2681
Mfr. Part No.:: SI1967DH-T1-GE3
Brand:: Vishay

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

This image is representative of the product range

1700 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.21

(exc. GST)

$0.23

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$0.21	$630.00
15000 +	$0.189	$567.00

*price indicative

RS Stock No.:: 145-2681
Mfr. Part No.:: SI1967DH-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual P-Channel MOSFET, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	790 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Typical Gate Charge @ Vgs	2.6 nC @ 8 V
Transistor Material	Si
Width	1.35mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	2.2mm
Minimum Operating Temperature	-55 °C
Height	1mm