Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3

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Subtotal (1 pack of 50 units)*

$36.60

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$40.25

(inc. GST)

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Per Pack*
50 - 700$0.732$36.60
750 - 1450$0.713$35.65
1500 +$0.702$35.10

*price indicative

Packaging Options:
RS Stock No.:
812-3091
Mfr. Part No.:
SI1922EDH-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.3A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SC-88

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

263mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.25W

Typical Gate Charge Qg @ Vgs

1.6nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1mm

Standards/Approvals

No

Width

1.35 mm

Length

2.2mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N-Channel MOSFET, Vishay Semiconductor


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