Vishay Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3
- RS Stock No.:
- 787-9055
- Mfr. Part No.:
- SI1029X-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)**
$11.26
(exc. GST)
$12.38
(inc. GST)
1560 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $60.00 ex GST
Real time qty checker
Units | Per unit | Per Pack** |
---|---|---|
20 - 140 | $0.563 | $11.26 |
160 - 740 | $0.544 | $10.88 |
760 - 1480 | $0.519 | $10.38 |
1500 + | $0.506 | $10.12 |
**price indicative
- RS Stock No.:
- 787-9055
- Mfr. Part No.:
- SI1029X-T1-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 190 mA, 300 mA | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-523 (SC-89) | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 3 Ω, 8 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 250 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Width | 1.7mm | |
Length | 1.7mm | |
Typical Gate Charge @ Vgs | 1700 nC @ 15 V, 750 nC @ 4.5 V | |
Maximum Operating Temperature | +150 °C | |
Height | 0.6mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 190 mA, 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-523 (SC-89) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 3 Ω, 8 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 250 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Width 1.7mm | ||
Length 1.7mm | ||
Typical Gate Charge @ Vgs 1700 nC @ 15 V, 750 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
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