N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3PN IXYS IXFQ26N50P3

RS Stock No.:: 802-4458
Mfr. Part No.:: IXFQ26N50P3
Brand:: IXYS

N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3PN IXYS IXFQ26N50P3

This image is representative of the product range

222 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 2)

$10.97

(exc. GST)

$12.07

(inc. GST)

Units	Per unit	Per Pack*
2 - 6	$10.97	$21.94
8 - 14	$10.705	$21.41
16 +	$10.53	$21.06
*price indicative

RS Stock No.:: 802-4458
Mfr. Part No.:: IXFQ26N50P3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	26 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar3
Package Type	TO-3P
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	240 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	500 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	42 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	15.8mm
Width	4.9mm
Minimum Operating Temperature	-55 °C
Height	20.3mm