N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3PN IXYS IXFQ94N30P3

RS Stock No.:: 168-4742
Mfr. Part No.:: IXFQ94N30P3
Brand:: IXYS

N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3PN IXYS IXFQ94N30P3

This image is representative of the product range

7 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 30)

$15.084

(exc. GST)

$16.592

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$15.084	$452.52
150 +	$13.575	$407.25

*price indicative

RS Stock No.:: 168-4742
Mfr. Part No.:: IXFQ94N30P3
Brand:: IXYS

Technical data sheets

IXFT94N30P3, IXFQ94N30P3, IXFH94N30P3, Polar3 HiperFET Power MOSFET, N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Legislation and Compliance

COO (Country of Origin):: US

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	94 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	TO-3PN
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	36 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	102 nC @ 10 V
Width	4.9mm
Length	15.8mm
Height	20.3mm
Minimum Operating Temperature	-55 °C