- RS Stock No.:
- 787-9421
- Mfr. Part No.:
- SiHG30N60E-GE3
- Brand:
- Vishay
Available for back order.
Price (ex. GST) Each
$8.94
(exc. GST)
$9.83
(inc. GST)
Units | Per unit |
---|---|
1 - 6 | $8.94 |
7 - 12 | $8.79 |
13 + | $8.64 |
- RS Stock No.:
- 787-9421
- Mfr. Part No.:
- SiHG30N60E-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 29 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-247AC |
Series | E Series |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 125 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 15.87mm |
Transistor Material | Si |
Width | 5.31mm |
Height | 20.82mm |
Minimum Operating Temperature | -55 °C |
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