Vishay N-Channel 80 V Type N-Channel MOSFET, 137.5 A, 80 V, 8-Pin SO-8 SIR5802DP-T1-RE3

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$16.91

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$18.60

(inc. GST)

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Per Pack*
5 - 45$3.382$16.91
50 - 95$3.318$16.59
100 - 245$3.254$16.27
250 - 995$3.19$15.95
1000 +$3.134$15.67

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Packaging Options:
RS Stock No.:
225-9932
Mfr. Part No.:
SIR5802DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137.5A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

N-Channel 80 V

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

60nC

Maximum Operating Temperature

150°C

Height

5.26mm

Standards/Approvals

No

Width

1.12 mm

Length

6.25mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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