Vishay N-Channel 80 V Type N-Channel MOSFET, 299 A, 80 V, 4-Pin PowerPAK (8x8L)
- RS Stock No.:
- 225-9920
- Mfr. Part No.:
- SIJH800E-T1-GE3
- Brand:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 225-9920
- Mfr. Part No.:
- SIJH800E-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 299A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK (8x8L) | |
| Series | N-Channel 80 V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Typical Gate Charge Qg @ Vgs | 210nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Height | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 299A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK (8x8L) | ||
Series N-Channel 80 V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Typical Gate Charge Qg @ Vgs 210nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Height 8mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Fully lead (Pb)-free device
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
50 % smaller footprint than D2PAK (TO-263)
100 % Rg and UIS tested
Related links
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L) SIJH800E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L) SIR122LDP-T1-RE3
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L)
- Vishay SISS5812DN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK
- Vishay SiS128LDN Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L) SQJ180EP-T1_GE3