Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-220 SIHP5N80AE-GE3
- RS Stock No.:
- 225-9919
- Mfr. Part No.:
- SIHP5N80AE-GE3
- Brand:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | $1.55 | $15.50 |
| 20 - 20 | $1.52 | $15.20 |
| 30 - 40 | $1.492 | $14.92 |
| 50 + | $1.465 | $14.65 |
*price indicative
- RS Stock No.:
- 225-9919
- Mfr. Part No.:
- SIHP5N80AE-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.85mm | |
| Length | 10.52mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.85mm | ||
Length 10.52mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Related links
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