Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

$80.85

(exc. GST)

$88.95

(inc. GST)

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Units
Per unit
Per Tube*
50 - 100$1.617$80.85
150 - 200$1.588$79.40
250 +$1.559$77.95

*price indicative

RS Stock No.:
225-9911
Mfr. Part No.:
SIHB5N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

9.65 mm

Length

10.67mm

Standards/Approvals

No

Height

15.88mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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