Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

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Subtotal (1 pack of 10 units)*

$14.70

(exc. GST)

$16.20

(inc. GST)

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  • 2,140 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40$1.47$14.70
50 - 90$1.425$14.25
100 - 240$1.38$13.80
250 - 990$1.337$13.37
1000 +$1.297$12.97

*price indicative

Packaging Options:
RS Stock No.:
228-2852
Mfr. Part No.:
SiHD5N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

11nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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