Vishay SiR882BDP Type N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

$20.58

(exc. GST)

$22.64

(inc. GST)

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Units
Per unit
Per Pack*
10 - 740$2.058$20.58
750 - 1490$2.007$20.07
1500 +$1.977$19.77

*price indicative

Packaging Options:
RS Stock No.:
210-5007
Mfr. Part No.:
SiR882BDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

67.5A

Maximum Drain Source Voltage Vds

100V

Series

SiR882BDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83.3W

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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