Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

$16.66

(exc. GST)

$18.33

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 21,720 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 40$1.666$16.66
50 - 90$1.636$16.36
100 - 240$1.605$16.05
250 - 990$1.576$15.76
1000 +$1.547$15.47

*price indicative

Packaging Options:
RS Stock No.:
228-2912
Mfr. Part No.:
SiR876BDP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51.4A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71.4W

Typical Gate Charge Qg @ Vgs

42.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

Related links