Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

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Subtotal (1 pack of 5 units)*

$18.77

(exc. GST)

$20.645

(inc. GST)

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  • 5,260 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45$3.754$18.77
50 - 95$3.688$18.44
100 - 245$3.622$18.11
250 - 995$3.56$17.80
1000 +$3.492$17.46

*price indicative

Packaging Options:
RS Stock No.:
228-2904
Mfr. Part No.:
SiR510DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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