N-Channel MOSFET, 29 A, 150 V, 8-Pin PowerPAK SO-8 Vishay SIR632DP-T1-RE3

RS Stock No.:: 134-9159
Mfr. Part No.:: SIR632DP-T1-RE3
Brand:: Vishay

N-Channel MOSFET, 29 A, 150 V, 8-Pin PowerPAK SO-8 Vishay SIR632DP-T1-RE3

285 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.946

(exc. GST)

$1.041

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.946	$2,838.00
6000 - 9000	$0.923	$2,769.00
12000 +	$0.909	$2,727.00

*price indicative

RS Stock No.:: 134-9159
Mfr. Part No.:: SIR632DP-T1-RE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

Product Details

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	150 V
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	41 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	69.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.26mm
Typical Gate Charge @ Vgs	14 nC @ 10 V
Length	6.25mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Height	1.12mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C