Vishay SIRS5702DP Type N-Channel Single MOSFETs, 119 A, 150 V Enhancement, 8-Pin PowerPAK

N

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Subtotal (1 tape of 1 unit)*

$6.14

(exc. GST)

$6.75

(inc. GST)

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1 - 9$6.14
10 - 24$5.96
25 - 99$5.84
100 - 499$4.97
500 +$4.67

*price indicative

RS Stock No.:
653-131
Mfr. Part No.:
SIRS5702DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

150V

Series

SIRS5702DP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0072Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

44nC

Maximum Power Dissipation Pd

245W

Maximum Operating Temperature

150°C

Height

0.95mm

Length

6.10mm

Width

5.10 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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