Vishay MaxSiC N channel-Channel MOSFET, 32 A, 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3
- RS Stock No.:
- 790-413
- Mfr. Part No.:
- MXP120A080SE-T1GE3
- Brand:
- Vishay
N
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$21.46
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$23.61
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | $21.46 |
| 10 - 49 | $13.30 |
| 50 - 99 | $10.29 |
| 100 + | $6.96 |
*price indicative
- RS Stock No.:
- 790-413
- Mfr. Part No.:
- MXP120A080SE-T1GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MaxSiC | |
| Package Type | TO-263-7L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | 4.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 185W | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.23mm | |
| Standards/Approvals | RoHS | |
| Width | 10.28mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MaxSiC | ||
Package Type TO-263-7L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf 4.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 185W | ||
Maximum Operating Temperature 175°C | ||
Length 9.23mm | ||
Standards/Approvals RoHS | ||
Width 10.28mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay High performance N-Channel MOSFET is designed for efficient energy conversion in demanding applications, featuring Advanced switching capabilities and robust operational characteristics.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs improves reliability
Gate-source voltage of -10 to +22 V allows flexible operation
Continuous drain current of 32 A ensures effective functionality
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