Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 7-Pin TO-263-7L MXP120A063SE-T1GE3

N
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$24.56

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$27.02

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1 - 4$24.56
5 +$24.08

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RS Stock No.:
790-412
Mfr. Part No.:
MXP120A063SE-T1GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

41A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263-7L

Series

MaxSiC

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

79mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22V

Maximum Power Dissipation Pd

221W

Forward Voltage Vf

4.8V

Maximum Operating Temperature

175°C

Height

4.5mm

Length

9.23mm

Standards/Approvals

RoHS

Width

10.28mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay High performance N-Channel SiC MOSFET is designed for efficient power management in demanding applications. It excels in its Ability to handle high voltages and ensure reliable operation.

Fast switching speed enhances overall system performance

Short circuit withstand time of 3 μs ensures reliability during faults

Operating voltage range for gate-source control optimises flexibility

Continuous drain current capability supports robust energy transfer

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