Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 7-Pin TO-263-7L MXP120A063SE-T1GE3
- RS Stock No.:
- 790-412
- Mfr. Part No.:
- MXP120A063SE-T1GE3
- Brand:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
$24.56
(exc. GST)
$27.02
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 29 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | $24.56 |
| 5 + | $24.08 |
*price indicative
- RS Stock No.:
- 790-412
- Mfr. Part No.:
- MXP120A063SE-T1GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7L | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 221W | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 9.23mm | |
| Standards/Approvals | RoHS | |
| Width | 10.28mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7L | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 221W | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 9.23mm | ||
Standards/Approvals RoHS | ||
Width 10.28mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay High performance N-Channel SiC MOSFET is designed for efficient power management in demanding applications. It excels in its Ability to handle high voltages and ensure reliable operation.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs ensures reliability during faults
Operating voltage range for gate-source control optimises flexibility
Continuous drain current capability supports robust energy transfer
Related links
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXP120A063SL-GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 7-Pin TO-263-7L MXPQ120A045SE-1GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXPQ120A063SL-GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXPQ120A080SL-GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXP120A080SL-GE3
- Vishay MXP N channel-Channel Power Semiconductor 1200 V N, 7-Pin TO-263-7L MXP120A045SE-T1GE3
- Infineon iPB Type P-Channel MOSFET 150 V N, 3-Pin TO-263 IPB720P15LMATMA1
