Infineon IGBT, 20 A 650 V TO-220
- RS Stock No.:
- 242-0977
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 500 units)*
$691.00
(exc. GST)
$760.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 03 August 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | $1.382 | $691.00 |
| 1000 - 1000 | $1.349 | $674.50 |
| 1500 + | $1.316 | $658.00 |
*price indicative
- RS Stock No.:
- 242-0977
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 125W | |
| Package Type | TO-220 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Height | 4.57mm | |
| Length | 29.95mm | |
| Width | 10.36 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 125W | ||
Package Type TO-220 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Height 4.57mm | ||
Length 29.95mm | ||
Width 10.36 mm | ||
Automotive Standard No | ||
The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
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