Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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Subtotal (1 pack of 2 units)*

$7.51

(exc. GST)

$8.26

(inc. GST)

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Temporarily out of stock
  • 274 unit(s) shipping from 23 February 2026
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Units
Per unit
Per Pack*
2 - 8$3.755$7.51
10 - 98$3.67$7.34
100 - 248$3.585$7.17
250 - 498$3.50$7.00
500 +$3.415$6.83

*price indicative

Packaging Options:
RS Stock No.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

125 W

Number of Transistors

1

Configuration

Single

Package Type

TO-220-3

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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