Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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Subtotal (1 pack of 2 units)*

$8.04

(exc. GST)

$8.84

(inc. GST)

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  • 280 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$4.02$8.04
10 - 98$3.93$7.86
100 - 248$3.84$7.68
250 - 498$3.75$7.50
500 +$3.66$7.32

*price indicative

Packaging Options:
RS Stock No.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

125 W

Number of Transistors

1

Package Type

TO-220-3

Configuration

Single

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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