onsemi 1.2 kV 2 A Schottky Diode & Rectifier 2-Pin TO-220-2 UJ3D1202TS

RS Stock No.:: 648-514
Mfr. Part No.:: UJ3D1202TS
Brand:: onsemi

onsemi 1.2 kV 2 A Schottky Diode & Rectifier 2-Pin TO-220-2 UJ3D1202TS

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Subtotal (1 bag of 2 units)*

$5.78

(exc. GST)

$6.36

(inc. GST)

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Units	Per unit	Per Bag*
2 +	$2.89	$5.78

*price indicative

RS Stock No.:: 648-514
Mfr. Part No.:: UJ3D1202TS
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Schottky Diode & Rectifier
	Mount Type	Through Hole
	Package Type	TO-220-2
	Maximum Continuous Forward Current If	2A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Series	UJ3
	Diode Configuration	Single
	Pin Count	2
	Peak Non-Repetitive Forward Surge Current Ifsm	30A
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	2.6V
	Peak Reverse Current Ir	22μA
	Maximum Operating Temperature	175°C
	Width	4.19mm
	Length	10.16mm
	Standards/Approvals	Pb-Free, RoHS
	Height	15.37mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Schottky Diode & Rectifier
	Mount Type Through Hole
	Package Type TO-220-2
	Maximum Continuous Forward Current If 2A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Series UJ3
	Diode Configuration Single
	Pin Count 2
	Peak Non-Repetitive Forward Surge Current Ifsm 30A
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 2.6V
	Peak Reverse Current Ir 22μA
	Maximum Operating Temperature 175°C
	Width 4.19mm
	Length 10.16mm
	Standards/Approvals Pb-Free, RoHS
	Height 15.37mm
	Automotive Standard No

Datasheet - UJ3D1202TS

COO (Country of Origin):: PH

The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Easy paralleling

Extremely fast switching not dependent on temperature

No reverse or forward recovery

100% UIS tested