Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

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$25.28

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$27.80

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640 - 1240$1.243$24.86
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Packaging Options:
RS Stock No.:
812-3233
Mfr. Part No.:
SI4599DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

40V

Series

Si4599DY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.045Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Width

4 mm

Standards/Approvals

JEDEC JS709A, RoHS

Length

5mm

Height

1.55mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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