Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

This image is representative of the product range

7340 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 20)

$1.155

(exc. GST)

$1.271

(inc. GST)

Units	Per unit	Per Pack*
20 - 620	$1.155	$23.10
640 - 1240	$1.135	$22.70
1260 +	$1.115	$22.30

*price indicative

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Si4599DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Width	4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

Related links