Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2500 units)*

$1,115.00

(exc. GST)

$1,227.50

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 24 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 10000$0.446$1,115.00
12500 +$0.401$1,002.50

*price indicative

RS Stock No.:
165-2751
Mfr. Part No.:
SI9933CDY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

17nC

Transistor Configuration

Isolated

Standards/Approvals

No

Height

1.55mm

Width

4 mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links