Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 165-7255
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

This image is representative of the product range

7360 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$0.54

(exc. GST)

$0.59

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$0.54	$1,350.00
5000 - 7500	$0.527	$1,317.50
10000 +	$0.519	$1,297.50

*price indicative

RS Stock No.:: 165-7255
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual N/P-Channel MOSFET, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Length	5mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.55mm