Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

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Subtotal (1 tape of 50 units)*

$31.85

(exc. GST)

$35.05

(inc. GST)

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50 +$0.637$31.85

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Packaging Options:
RS Stock No.:
812-3136
Mfr. Part No.:
SI2367DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

Si2367DS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.066Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

9nC

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Width

1.4 mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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