Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

$12.26

(exc. GST)

$13.48

(inc. GST)

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Per Pack*
20 - 740$0.613$12.26
760 - 1480$0.597$11.94
1500 +$0.587$11.74

*price indicative

Packaging Options:
RS Stock No.:
814-1213
Mfr. Part No.:
SIA449DJ-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23.1nC

Forward Voltage Vf

-0.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

19W

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Height

0.8mm

Standards/Approvals

RoHS

Length

2.15mm

Width

2.15 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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