Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

This image is representative of the product range

2300 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 20)

$0.915

(exc. GST)

$1.007

(inc. GST)

Units	Per unit	Per Pack*
20 - 620	$0.915	$18.30
640 +	$0.892	$17.84

*price indicative

RS Stock No.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Brand:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Width	4mm
Length	5mm
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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