Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

$15.14

(exc. GST)

$16.655

(inc. GST)

Add to Basket
Select or type quantity
Being discontinued
  • Plus 5 unit(s) shipping from 29 December 2025
  • Final 3,875 unit(s) shipping from 05 January 2026
Units
Per unit
Per Pack*
5 - 620$3.028$15.14
625 - 1245$2.98$14.90
1250 +$2.912$14.56

*price indicative

Packaging Options:
RS Stock No.:
710-3345
Mfr. Part No.:
SI4559ADY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.4W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

13nC

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Height

1.5mm

Length

5mm

Standards/Approvals

No

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links