Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.:: 165-7226
Mfr. Part No.:: SI4532CDY-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

This image is representative of the product range

2300 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$0.403

(exc. GST)

$0.443

(inc. GST)

Units	Per unit	Per Reel*
2500 - 10000	$0.403	$1,007.50
12500 +	$0.362	$905.00

*price indicative

RS Stock No.:: 165-7226
Mfr. Part No.:: SI4532CDY-T1-GE3
Brand:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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