Toshiba P-Channel MOSFET, 5 A, 60 V, 3-Pin DPAK 2SJ668(TE16L1,NQ)
- RS Stock No.:
- 756-0338
- Mfr. Part No.:
- 2SJ668(TE16L1,NQ)
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 756-0338
- Mfr. Part No.:
- 2SJ668(TE16L1,NQ)
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Width | 5.5mm | |
| Height | 2.3mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Width 5.5mm | ||
Height 2.3mm | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, 2SJ Series, Toshiba
MOSFET Transistors, Toshiba
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