- RS Stock No.:
- 752-8381
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Brand:
- Infineon
7 In Global stock for delivery within 5 working day(s)
142 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$12.35
(exc. GST)
$13.59
(inc. GST)
Units | Per unit |
1 - 12 | $12.35 |
13 - 24 | $12.14 |
25 + | $11.91 |
- RS Stock No.:
- 752-8381
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 88 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-220 |
Series | OptiMOS 3 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 11 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 10.36mm |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 65 nC @ 10 V |
Width | 4.57mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 9.45mm |
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