N-Channel MOSFET Transistor, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1
- RS Stock No.:
- 911-4899
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Brand:
- Infineon
200 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 50)
$9.613
(exc. GST)
$10.574
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 200 | $9.613 | $480.65 |
| 250 + | $8.652 | $432.60 |
| *price indicative | ||
- RS Stock No.:
- 911-4899
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 88 A |
| Maximum Drain Source Voltage | 200 V |
| Series | OptiMOS 3 |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 11 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.36mm |
| Number of Elements per Chip | 1 |
| Width | 4.57mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 9.45mm |