N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

RS Stock No.:: 754-5434
Mfr. Part No.:: IPB107N20N3GATMA1
Brand:: Infineon

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

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853 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$12.22

(exc. GST)

$13.44

(inc. GST)

Units	Per unit
1 - 249	$12.22
250 - 499	$11.92
500 +	$11.73

RS Stock No.:: 754-5434
Mfr. Part No.:: IPB107N20N3GATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	9.45mm
Length	10.31mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	65 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	4.57mm