Infineon OptiMOS Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-263

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$5,596.00

(exc. GST)

$6,156.00

(inc. GST)

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Per Reel*
1000 - 4000$5.596$5,596.00
5000 +$5.036$5,036.00

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RS Stock No.:
911-0831
Mfr. Part No.:
IPB107N20N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Length

10.31mm

Height

4.57mm

Width

9.45 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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