Infineon OptiMOS N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

$3,979.00

(exc. GST)

$4,377.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 4000$3.979$3,979.00
5000 +$3.581$3,581.00

*price indicative

RS Stock No.:
911-0831
Mfr. Part No.:
IPB107N20N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.45mm

Length

10.31mm

Height

4.57mm

Automotive Standard

AEC-Q101

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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