Vishay E Type N-Channel MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247 SQW33N65EF-GE3
- RS Stock No.:
- 228-2975
- Mfr. Part No.:
- SQW33N65EF-GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
$16.78
(exc. GST)
$18.46
(inc. GST)
Add 8 units to get free delivery
In Stock
- Plus 418 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $8.39 | $16.78 |
| 10 - 24 | $8.14 | $16.28 |
| 26 - 98 | $7.90 | $15.80 |
| 100 - 498 | $7.665 | $15.33 |
| 500 + | $7.44 | $14.88 |
*price indicative
- RS Stock No.:
- 228-2975
- Mfr. Part No.:
- SQW33N65EF-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 109mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 109mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 SQW61N65EF-GE3
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 SQW44N65EF-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247