N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC Vishay SIHG20N50E-GE3
- RS Stock No.:
- 169-5791
- Mfr. Part No.:
- SIHG20N50E-GE3
- Brand:
- Vishay
325 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 25)
$3.88
(exc. GST)
$4.27
(inc. GST)
| Units | Per unit | Per Tube* |
| 25 - 100 | $3.88 | $97.00 |
| 125 + | $3.492 | $87.30 |
| *price indicative | ||
- RS Stock No.:
- 169-5791
- Mfr. Part No.:
- SIHG20N50E-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 500 V |
| Series | E Series |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 180 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 179 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Length | 15.87mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 20.82mm |