Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3

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Subtotal (1 pack of 5 units)*

$14.16

(exc. GST)

$15.575

(inc. GST)

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Last RS stock
  • Final 860 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5$2.832$14.16
10 - 20$2.784$13.92
25 - 95$2.736$13.68
100 - 245$2.688$13.44
250 +$2.638$13.19

*price indicative

Packaging Options:
RS Stock No.:
228-2881
Mfr. Part No.:
SiHP6N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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