Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-252

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

$30.875

(exc. GST)

$33.95

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 13 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 725$1.235$30.88
750 - 1475$1.204$30.10
1500 +$1.185$29.63

*price indicative

RS Stock No.:
200-6867
Mfr. Part No.:
SIHD6N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

22.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHD6N80AE-GE3 is a E series power MOSFET.

Low figure-of-merit

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

Related links