Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 50 units)*

$195.00

(exc. GST)

$214.50

(inc. GST)

Add to Basket
Select or type quantity
Being discontinued
  • Final 350 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 - 50$3.90$195.00
100 - 450$3.784$189.20
500 +$3.67$183.50

*price indicative

RS Stock No.:
228-2878
Mfr. Part No.:
SIHP21N80AEF-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

165.3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

47nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links