Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3

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Subtotal (1 pack of 5 units)*

$27.83

(exc. GST)

$30.615

(inc. GST)

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Last RS stock
  • Final 375 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5$5.566$27.83
10 - 20$5.40$27.00
25 - 95$5.238$26.19
100 - 495$5.08$25.40
500 +$4.928$24.64

*price indicative

Packaging Options:
RS Stock No.:
228-2879
Mfr. Part No.:
SIHP21N80AEF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

165.3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

47nC

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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